Gbólólólóhùn Asiri: Asiri rẹ ṣe pataki pupọ si wa. Ile-iṣẹ wa ṣe ileri lati ṣe sọ alaye ti ara ẹni si eyikeyi ifihan pẹlu awọn igbanilaaye rẹ.
Apo: Apoti paali
Ise sise: 1000000000 pcs/week
Iṣowo: Ocean,Land,Air
Ibi ti Oti: Ṣaina
Ipese Agbara: 7000000000 pcs/week
Ijẹrisi: GB/T19001-2008/ISO9001:2008
Koodu HS: 8541401000
Port: SHENZHEN
Iru owo sisan: T/T,Paypal,Western Union
Incoterm: FOB,EXW,FCA
Aṣeṣe No.: 503PT940D-A3
Brand: Ti o dara ju LED
Ta sipo: | Piece/Pieces |
---|---|
Iru Apoti: | Apoti paali |
503PT940D-A3
Phototransistor tun ni a npe ni PD diode , 503PT940D-A3 jẹ ah ig h iyara ati giga NPN ohun alumọni fọto tran sistor. Ọja miiran ti o jọra wa - photodiode. Lẹhinna kini iyatọ si photodiode ati phototransistor? Ni igbagbogbo, transistor fọto le ni iṣelọpọ nla diẹ sii ju diode fọto . P hototransistor jẹ ti ipele milliampere. Phototransistor dudu lọwọlọwọ jẹ tobi. Akoko idahun Photodiode kuru ju, p akoko idahun hototransistor kere ju 100 nanoseconds, akoko idahun hototransistor kere ju 5-20 microseconds. Laini ila-oorun Photodiode dara julọ, p laini ilara hototransistor buru.Ṣugbọn iwọn Trún PT jẹ kekere, iye owo jẹ kekere, iye owo hototransistor ga. Ọpọn Phototransistor jẹ eyiti o ni ifaragba diẹ si ipa ti iwọn otutu ibaramu, iyipada fọto fọto lọwọlọwọ tobi. Iwọle ina ti phototransistor jẹ idapọ ni rọọrun, eyiti o ni ibatan si ifosiwewe titobi giga rẹ. Phototransistor le ṣee lo fun iṣaro ati gbigba awọn ayeye ina. Photodiode tube i wa taara gbigba ina. 503PT940D-A3 jẹ phototransistor ti o ni igun wiwo wiwo 20.
- Size: 5.0*H8.7mm - Chip Number:1 chips - Color: 940nm - Type: Black - Chip brand: tyntek |
- Different color are available - Different wavelength are available
- Warranty: 5 Years
- RoHS, REACH, EN62471 |
- Uniform light output - Long life-solid state reliability
- Low Power consumption
-Anti UV epoxy resin package -High temperature resistance |
* Iwọn yii tun wa fun LED miiran, gẹgẹ bi UV LED, IR LED (810nm LED, 850nm LED ...), Amber LED, Yellow LED, LED RGB, Awọn atupa LED Blinking *
* Awọn awọ ninu fọto ti mu nipasẹ kamẹra, jọwọ mu awọ emitting gangan bi boṣewa.
Parameter |
Symbol |
Min |
Typ |
Max |
Unit |
Test Condition |
Collector-Emitter Voltage |
VCEO |
|
|
30 | V |
|
Emitter-Collector Voltage |
VECO |
|
|
6.5 | V |
|
Collector Dark Current |
ICEO |
|
100 |
nA |
VCE=20V Ee=0mw/cm2 |
|
Collector-Emitter Breakdown Voltage |
Bvceo |
30 |
100 |
V |
ICBO=100uA Ee=0mw/cm2 |
|
Emitter-Collector Breakdown Voltage |
Bvceo |
6 |
|
V |
IECO=10uA |
|
Collector-Emitter Saturation Voltage |
VCE(sat) |
|
0.4 |
V |
IC=2mA IB=100uA Ee=1mw/cm2 |
|
Photocurrent 1 |
IPCE |
30 |
|
90 |
uA |
Vce=5V Ee=1mw/cm2
λP=850nm |
Photocurrent 2 |
IPCE | 90 |
|
270 | uA |
VCE=5V Ee=1mw/cm2 λP=940nm |
Current gain |
hFE |
270 |
|
900 |
uA |
VCE=5V IC=2mA |
Wavelenghth of Peak Sensitivity |
λP | 940 |
|
nm |
|
|
Range of Spectral Bandwidth |
λ0.5 |
400 |
|
1100 |
nm |
|
Response Time-Rise Time |
tR |
15 |
us |
Vce=5v Ic=1mA
RL=1000Ω |
||
Response Time-Fall Time |
tF |
|
15 |
|
us | |
Half Sensitivity angle |
△λ |
|
±10 |
|
deg |
|
Collector-base Capacitance |
CCB |
|
|
8 | PF | F=1MHz,VCB=3V |
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Gbólólólóhùn Asiri: Asiri rẹ ṣe pataki pupọ si wa. Ile-iṣẹ wa ṣe ileri lati ṣe sọ alaye ti ara ẹni si eyikeyi ifihan pẹlu awọn igbanilaaye rẹ.
Fọwọsi alaye diẹ sii ki o le wọle si ọ ni iyara
Gbólólólóhùn Asiri: Asiri rẹ ṣe pataki pupọ si wa. Ile-iṣẹ wa ṣe ileri lati ṣe sọ alaye ti ara ẹni si eyikeyi ifihan pẹlu awọn igbanilaaye rẹ.