 Lihlahisoa> WaveLeath e felletseng> 940NM LED> 3W 940nm High Power go la la Emitting Diode

3W 940nm High Power go la la Emitting Diode

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Mofuta oa Lekhetho: T/T,Paypal,Western Union
Incoterm: FOB,EXW,FCA
Min. Laela: 100 Piece/Pieces
Lipalangoang: Ocean,Land,Air
Port: SHENZHEN

Phepelo Matla & Informations eketsehileng

Additional Information

Packaging: Lebokose la lebokose

Tlhahiso: 1000000000 pcs/week

Lipalangoang: Ocean,Land,Air

Sebaka sa Tšimoloho: Chaena

Matla a ho Fana: 7000000000 pcs/week

Setifikeiti: GB/T19001-2008/ISO9001:2008

HS Code: 8541401000

Port: SHENZHEN

Mofuta oa Lekhetho: T/T,Paypal,Western Union

Incoterm: FOB,EXW,FCA

Litšobotsi tsa Sehlahisoa

Setšoantšo sa No.: 3838IRC-94L/42I350-90A

Mochine: Molemo ka ho fetisisa LED

Ho paka le ho tlisa

Ho rekisa lihlopha:	Piece/Pieces
Mofuta oa Sephutheloana:	Lebokose la lebokose

Khampani ea Video

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2835 SMD Led Ad Patipile Reel haraka

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Tlanya li-LED tsa lesoba joalo ka lesela la toloki

Tlhaloso ea Sehlahisoa

- Leseli la 940nm -

EA-3838IRC-94L / 42I350-90A

Li-diode tse ntšang matla a infrared tsena tse 3838IRC-94L / 42I350-90A li ne li phuthetsoe ka 3.8 * 3.8mm e kenang ka har'a sephutheloana se hlakileng sa silicone. Bakeng sa nyeoe ena ea 3838 SMD LED, re ka e paka ka matla a phahameng a IR LED 940nm LED kapa infrared LED 850nm LED le ceramic substrate le 90 degree e shebaneng le lense e eketsehileng. Leseli tsena tsa IR li na le li-die tse se nang letho tse nang le li-mil, tse nang le 3838 SMD LED, matla ana a phahameng a IR LED a tla sebetsa hantle ka ho chesa mocheso. E leng etsa bonnete ba hore LED ena ea IR e tla ts'epahala le ho sebetsa hantle haholo ha mocheso oa ts'ebetso o fetoha. Bapisa le lebone le phahameng la infrared 850nm LED, lebone lena la 940nm le tla fumana matla a tlase. Joalokaha re tseba, 940nm ke bokahare ba infrared, bo sa bonahaleng ka mahlo a rona a hlobotseng. Empa bakeng sa matla ana a phahameng a 940nm LED, u ntse u ka bona letheba le khubelu ha e sebetsa hobane mahlaseli a phahameng. Haeba o hloka matla a phahameng a 940nm infrared LED bakeng sa projeke ea hau, ena e ke ke ea u lumella hore u soetsehe.

940nm infrared emitters - High Power

- Size: 3.85*3.85*H2.33mm

- Chip Number:1 chips

- Color: 940nm

- Type: water clear

- Chip brand: Epistar

-Viewing angle: 90 degree

- Different color are available

- Different wavelength are available

- Warranty: 5 Years

- RoHS, REACH, EN62471

- Uniform light output

- Long life-solid state reliability

- Low Power consumption

-Anti UV epoxy resin package

-High temperature resistance

- Boholo ba LED ea Matla a Phahameng -

High Power IR LED Size

. Litekanyo tsohle li limilimithara; 2. Mamello ke ± 0.10 mm ntle le ha ho boletsoe ka hosele.

- Nyeoe ena e fumaneha hape bakeng sa 940nm LED, 850nm LED ect e phahameng ea matla IR LED -

- Ho sebetsa ka lesoba la IR LED -

850nm IR led

* Mebala e setšoantšong e nkuoe ka kh'amera, ka kopo nka 'mala o hlasimollang o tloaelehileng.

- Lisebelisoa tsa Motlakase -

Tekanyo e felletseng ea boholo bo holimo ho Ta = 25 ℃

Parameter	Symbol	Rating
Power Dissipation	Pd	2500mW
Pulse Forward Current	IFP	2000mw
Forward Current	IF	1000mA
Reverse Voltage	VR	5V
Junction Temperature	Tj	115°C
Operating Tempertature	Topr	-40 - +80°C
Storage Tempertature	Tstg	-40 - +100°C
Soldering Temperature	Tsol	260°C
Electro-Static-Discharge(HBM)	ESD	1000v
Warranty	Time	5Years
Antistatic bag	Piece	2000Back
*Pulse Forward Current Condition:Duty 1% and Pulse Width=10us.
*Soldering Condition:Soldering condition must be completed with 3 seconds at 260°C

Likarolo tsa Optical le motlakase ( T c = 25 ℃ )

Parameter

Symbol

Min

Typ

Max

Unit

Test Condition

Forward Voltage

VF

1.5

2.0

V

IF=350mA

2.5 3.2 V IF=1000mA

Luminous Flux

Φ

230

280
mw/sr

IF=350mA

420
mw/sr IF=1000mA

Peak Wavelength

λP

940

nm

IF=20mA

Half Width

Dl

40

nm

IF=20mA

Viewing Half Angle

2q1/2

±45

deg

IF=20mA

Reverse Current

IR

10

uA

VR=5V

Rise Time

Tr

15

ns

IF=20mA

Fall Time

Tf

13

ns

IF=20mA

Luminous Intensity is measured by ZWL600.

q1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.

*lD is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device.

- Khokahano ea terata ea khauta -

* Bakeng sa ho boloka nako e ngoe le e ngoe ea bophelo ba LED, feme ea BestLED e sebelisa terata e phahameng ea khauta bakeng sa khokahano ea potoloho ea kahare

- Paka ea LED ea IR -

IR LED

* Re ka thoto LED ena le palo efe kapa efe ea liphutheloana ebe o tlanya kapa koba lithakhisa tsa LED joalo ka tlhoko ea hau.

- Ts'ebeliso -

- E amanang le SMD IR LED -

- Tsamaiso ea Tlhahiso -

LED LAMP

- LED ea SMD IR -

- Litifikeiti -

GB / T19001-2008 / ISO9001: 2008, RoHS, CE, SVHC (Finyella), EN62471

- Melemo -

1. Sehlahisoa se ne se tletse ka chip e tsoang kantle ho naha le e kholo, e nang le khanya e phahameng le ts'ebetso e phahameng

2. Ho sebelisa lithapo tsa khauta e hloekileng tsa 99.99 ho cheseletsa, ka hona lihlahisoa tsa rona li na le nako e telele ea ts'ebetso le ts'ebetso e tsitsitseng

3. Ho sebelisa sekhomaretsi se tsoang kantle ho naha le se tlase sa ho thibela ho paka le ho fumana nako e fetang lihora tse 80000 tsa bophelo

4. Sehlahisoa sa rona se ka sebelisoa haholo libakeng tse fapaneng joalo ka: mabone, lisebelisoa, lihlahisoa tsa elektroniki tse phahameng

5.Tšireletso ea tikoloho: methapo e seng chefo ea mercury, ha ho na radiation ea infrared le ultraviolet;

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Category: 940NM LED

 Lihlahisoa> WaveLeath e felletseng> 940NM LED> 3W 940nm High Power go la la Emitting Diode

Parameter	Symbol	Min	Typ	Max	Unit	Test Condition
Forward Voltage	VF	1.5		2.0	V	IF=350mA
Forward Voltage	VF		2.5	3.2	V	IF=1000mA
Luminous Flux	Φ	230		280	mw/sr	IF=350mA
Luminous Flux	Φ		420		mw/sr	IF=1000mA
Peak Wavelength	λP		940		nm	IF=20mA
Half Width	Dl		40		nm	IF=20mA
Viewing Half Angle	2q1/2		±45		deg	IF=20mA
Reverse Current	IR			10	uA	VR=5V
Rise Time	Tr		15		ns	IF=20mA
Fall Time	Tf		13		ns	IF=20mA
*Luminous Intensity is measured by ZWL600.
*q1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.
*lD is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device.