Products> IR Receiver> 5mm Phototransistor (detector) IR Receiver Black Lens
5mm Phototransistor (detector) IR Receiver Black Lens
5mm Phototransistor (detector) IR Receiver Black Lens
5mm Phototransistor (detector) IR Receiver Black Lens
5mm Phototransistor (detector) IR Receiver Black Lens
5mm Phototransistor (detector) IR Receiver Black Lens
5mm Phototransistor (detector) IR Receiver Black Lens
5mm Phototransistor (detector) IR Receiver Black Lens
5mm Phototransistor (detector) IR Receiver Black Lens

5mm Phototransistor (detector) IR Receiver Black Lens

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    • Payment Type: T/T,Paypal,Western Union
    • Incoterm: FOB,EXW,FCA
    • Min. Order: 5000 Piece/Pieces
    • Transportation: Ocean,Land,Air
    • Port: SHENZHEN
    Supply Ability & Additional Information
    Additional Information

    PackagingCarton box

    Productivity1000000000 pcs/week

    TransportationOcean,Land,Air

    Place of OriginChina

    Supply Ability7000000000 pcs/week

    CertificateGB/T19001-2008/ISO9001:2008

    HS Code8541401000

    PortSHENZHEN

    Payment TypeT/T,Paypal,Western Union

    IncotermFOB,EXW,FCA

    Product Attributes

    Model No.503PT940D-A3

    BrandBest LED

    CertificationOther

    UsageOther

    ApplicationElectronic Products

    Luminous IntensityStandard

    ColorOther

    FormationGold Thread

    TypeInfrared LED

    Voltage1.5V

    Inner PackingAnti-static Bag

    Wavelength940nm

    Type Of LensClear Lens

    Beam Width20 Degree

    PolarityShort Pin Mark Cathode

    Antistatic Bag1000PCS/Bag

    Collector-Emitter Voltage30v

    1000PCS Weight330g

    Emitter-Collector Voltage6.5v

    Packaging & Delivery
    Selling Units: Piece/Pieces
    Package Type: Carton box
    Company Video
    Type through-hole LED as a reel strip
    Product Description

     - IR Receiver LED -

    503PT940D-A3

    Phototransistor is also called PD diode, 503PT940D-A3 is a high speed and high sensitive NPN silicon photo transistor. There have other similar product - photodiode. Then what's the different from photodiode and phototransistor? Typically, the phototransistor can got more large output than photodiode. Phototransistor is of milliampere level. Phototransistor dark current is larger. Photodiode response time is shorter, phototransistor response time is less than 100 nanoseconds, phototransistor response time is less than 5-20 microseconds. Photodiode linearity is better, phototransistor linearity is worse.But PT chip size is small,cost is low, phototransistor cost is high. Phototransistor tube is more susceptible to the influence of ambient temperature, photocurrent fluctuation is large. The light input of the phototransistor is easily saturated, which is related to its high amplification factor. Phototransistor  can be used for reflecting and receiving light occasions. Photodiode tube is generally directly receiving light. 503PT940D-A3 is a phototransistor that have 20 degree viewing angle. 

    940nm ir LED Receiver

    - Size: 5.0*H8.7mm

    - Chip Number:1 chips

    - Color: 940nm 

    - Type: Black

    - Chip brand: tyntek


    - Different color are available

    - Different wavelength are available

    - Warranty: 5 Years

    - RoHS, REACH, EN62471

    - Uniform light output

    - Long life-solid state reliability

    - Low Power consumption

    -Anti UV epoxy resin package

    -High temperature resistance






    - Size of 5mm IR through-hole LED -

    5mm led

    *This size are also available for other LED, such as UV LED , IR LED (810nm LED, 850nm LED...), Amber LED, Yellow LED, RGB LED, Blinking LED Lamps *

    -  Working Through-hole IR Receiver LED  -

    PT940 led

    *Colors in the photo was took by camera, please take actual emitting color as standard. 

    -  Through-hole IR Receiver LED Parameter  -

    Parameter

    Symbol

    Min

    Typ

    Max

    Unit

    Test Condition

    Collector-Emitter Voltage

    VCEO

    30 V

    Emitter-Collector Voltage

    VECO

    6.5 V

    Collector Dark Current

    ICEO


    100

    nA

    VCE=20V

    Ee=0mw/cm2

    Collector-Emitter

    Breakdown Voltage

    Bvceo

    30

    100

    V

    ICBO=100uA

    Ee=0mw/cm2

    Emitter-Collector

    Breakdown Voltage

    Bvceo

    6


    V

    IECO=10uA

    Collector-Emitter

    Saturation Voltage

    VCE(sat)


    0.4

    V

    IC=2mA

    IB=100uA

    Ee=1mw/cm2

    Photocurrent 1

    IPCE

    30


    90

    uA

    Vce=5V

    Ee=1mw/cm2

    λP=850nm

    Photocurrent 2

    IPCE 90
    270 uA

    VCE=5V

    Ee=1mw/cm2

    λP=940nm

    Current gain

    hFE

    270


    900

    uA

    VCE=5V

    IC=2mA

    Wavelenghth of Peak Sensitivity

    λP 940


    nm


    Range of Spectral Bandwidth

    λ0.5

    400


    1100

    nm


    Response Time-Rise Time

    tR

    15

    us

    Vce=5v

    Ic=1mA

    RL=1000Ω

    Response Time-Fall Time

    tF
    15
    us

    Half Sensitivity angle

    △λ

    ±10

    deg

    Collector-base Capacitance

    CCB

    8 PF F=1MHz,VCB=3V

    - Golden wire connection -

      infrared led

    * In order to keep every one of LED's long lifespan, BestLED factory use high pure gold wire for inside circuit connection

    - IR LED Packing -

    5mm 940nm led 2

    *We can pack this LED with any number of packages and taped or bend the LED pins as your requirement.

    - Related IR LED -

    940 nm LED

    - Production Process -

    LED LAMP

    - Through-hole IR LED -

     Through -hol led




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